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2SJ296 Silicon P-Channel MOSFET

2SJ296 Description

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching .

2SJ296 Features

* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. So

2SJ296 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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Datasheet Details

Part number
2SJ296
Manufacturer
Hitachi
File Size
50.58 KB
Datasheet
2SJ296_Hitachi.pdf
Description
Silicon P-Channel MOSFET

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