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2SJ297 Silicon P-Channel MOS FET

2SJ297 Description

2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching .

2SJ297 Features

* Low on-resistance
* High speed switching
* Low drive current
* 4 V gate drive device can be driven from 5 V source
* Suitable for switching regulator, DC-DC converter
* Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source

2SJ297 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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Datasheet Details

Part number
2SJ297
Manufacturer
Hitachi
File Size
23.48 KB
Datasheet
2SJ297-Hitachi.pdf
Description
Silicon P-Channel MOS FET

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Silicon P-Channel MOS FET Hitachi
Hitachi 2SJ297-like datasheet