Description
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching .
Features
* Low on-resistance
* High speed switching
* Low drive current
* 4 V gate drive device can be driven from 5 V source
* Suitable for switching regulator, DC-DC converter
* Avalanche ratings
Outline
LDPAK
4
123 D G
S
4
12 3
1. Gate 2. Drain 3. Source
Applications
* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr