Part number:
2SJ539
Manufacturer:
Hitachi Semiconductor
File Size:
54.47 KB
Description:
Silicon p-channel mosfet.
* Low on-resistance R DS(on) = 0.16 Ω typ.
* Low drive current
* 4 V gete drive devices
* High speed switching Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
2SJ539
Hitachi Semiconductor
54.47 KB
Silicon p-channel mosfet.
📁 Related Datasheet
2SJ530 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on).
2SJ530L - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on).
2SJ530S - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ530(L),2SJ530(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-655B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on).
2SJ531 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ531
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-646A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω ty.
2SJ532 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ532
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-653B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.042 Ω ty.
2SJ533 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ533
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-649B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω ty.
2SJ534 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ534
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-589C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω ty.
2SJ535 - Silicon P-Channel MOSFET
(Hitachi Semiconductor)
2SJ535
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-627B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω ty.
