2SJ539 Silicon P-Channel MOSFET

Hitachi Semiconductor

Description

2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SJ539
Manufacturer: Hitachi Semiconductor
File Size: 54.47 KB
Datasheet: 2SJ539_HitachiSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Features

* Low on-resistance R DS(on) = 0.16 Ω typ.
* Low drive current
* 4 V gete drive devices
* High speed switching Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

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2SJ539 Silicon P-Channel MOSFET Hitachi Semiconductor

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