HM62W8511H Datasheet (Hitachi Semiconductor) - 4M High Speed SRAM (512-kword x 8-bit)

HM62W8511H, 4M High Speed SRAM (512-kword x 8-bit)

The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high spee

HM62W8511H Features

* Single supply : 3.3 V ± 0.3 V

* Access time 12/15 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current : 150/130 mA (max)