Datasheet4U Logo Datasheet4U.com

BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501 Description

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th.Edition Nov.1998 .

BB501 Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* High gain; PG = 21.5 dB typ. at f = 900 MHz
* Low noise; NF = 1.85 dB typ. at f = 900 MHz
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

📥 Download Datasheet

Preview of BB501 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BB501
Manufacturer
Hitachi
File Size
71.00 KB
Datasheet
BB501_HitachiSemiconductor.pdf
Description
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

📁 Related Datasheet

  • BB504C - Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier (Hitachi Semiconductor)
  • BB505B - Silicon Variable Capacitance Diodes (Siemens Semiconductors)
  • BB505C - Build in Biasing Circuit MOS FET IC (Renesas Technology)
  • BB505G - Silicon Variable Capacitance Diodes (Siemens Semiconductors)
  • BB505M - Build in Biasing Circuit MOS FET IC (Renesas Technology)
  • BB506C - Built in Biasing Circuit MOS FET IC UHF RF Amplifier (Renesas Technology)
  • BB506M - Built in Biasing Circuit MOS FET IC UHF RF Amplifier (Renesas Technology)
  • BB510 - (BB5xx) Soild State Tuner Components (ITT)

📌 All Tags

Hitachi BB501-like datasheet