HL6738MG
Hitachi
38.27kb
Visible high power laser diode. The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source f
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HL6738MG - Visible High Power Laser Diode
(Opnext)
.DataSheet.in
HL6738MG
Visible High Power Laser Diode
Description
The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum wel.
HL6714G - AlGaInP Laser Diode
(Hitachi)
HL6714G
AlGaInP Laser Diode
ODE-208-192C (Z) Rev.3 Jan. 2003 Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-.
HL6724MG - band AlGaInP laser diode
(Hitachi Semiconductor)
HL6724MG
AlGaInP Laser Diode
Description
The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable.
HL601 - INFRARED EMITTING DIODES
(KODENSHI)
ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL601は、タイプのGaAlAsダイオードです。 The HL601 is a GaAlAs LED with a small and surface mount package.
HL601
FEATURES
●.
HL602 - INFRARED EMITTING DIODE
(KODENSHI KOREA)
(GaAlAs) INFRARED EMITTING DIODE
HL602
H L602‚Í •A“§–¾ Ž÷Ž‰ ƒŒ ƒ“ƒY ‚ð ‘• ’… ‚µ ‚½850nm ”g’· ‚Ì G aA lA s •ÔŠO ”- Œõ ƒ_ƒC ƒI •[ ƒh‚Å‚· •BŽw Œü •« ‚ª .
HL6111RFNWP5 - 5W WPC Wireless Power Receiver
(HALO)
HL6111RFNWP5
5W WPC Wireless Power Receiver
Features
◆ Single Chip WPC1.2.4 Wireless Power Receiver for 5W application
◆ Vrect Range: 4-24V Operation.
HL615 - INFRARED EMITTING DIODES
(KODENSHI)
ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL615
HL615は、レンズきのタイプのGaAlAsダイオードです。
HL615 is a surface mount type GaAlAs infrared emitting diode with resin .
HL63101MG - AlGaInP Laser Diode
(USHIO)
Data Sheet
HL63101MG/102MG
638nm / 7mW AlGaInP Laser Diode
Outline
Internal Circuit
Features
• Optical output power: 5mW(CW) • Visible light output.
HL63102MG - AlGaInP Laser Diode
(USHIO)
Data Sheet
HL63101MG/102MG
638nm / 7mW AlGaInP Laser Diode
Outline
Internal Circuit
Features
• Optical output power: 5mW(CW) • Visible light output.
HL6312G - (HL6312G / HL6313G) AlGaInP Laser Diodes
(Hitachi Semiconductor)
..
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
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