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2SJ399 P-Channel MOSFET

2SJ399 Description

2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st.Edition Application Low frequency power switching .

2SJ399 Features

* Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drai

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Datasheet Details

Part number
2SJ399
Manufacturer
Hitachi Semiconductor
File Size
36.97 KB
Datasheet
2SJ399_HitachiSemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Hitachi Semiconductor
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