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2SJ586 Silicon P Channel MOS FET High Speed Switching

2SJ586 Description

2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A (Z) 2nd.Edition.June 1999 .

2SJ586 Features

* Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA)
* 2.5 V gate drive device.
* Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta = 25°C) Ite

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Datasheet Details

Part number
2SJ586
Manufacturer
Hitachi Semiconductor
File Size
41.39 KB
Datasheet
2SJ586_HitachiSemiconductor.pdf
Description
Silicon P Channel MOS FET High Speed Switching

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Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor
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