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2SK3162 - N-Channel MOSFET

2SK3162 Description

2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd.Edition February 1999 .

2SK3162 Features

* Low on-resistance R DS = 60 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline TO
* 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vo

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Datasheet Details

Part number
2SK3162
Manufacturer
Hitachi Semiconductor
File Size
46.58 KB
Datasheet
2SK3162_HitachiSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Hitachi Semiconductor
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