2SK3380 - N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3380
Manufacturer	Hitachi Semiconductor
File Size	26.12 KB
Description	N-Channel MOSFET
Datasheet	2SK3380_HitachiSemiconductor.pdf

Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA).
4 V gate drive device. Outline SPAK D 12 3 G 1. Source 2. Drain 3. Gate S 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pul.

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Published: Mar 30, 2005 |