4AK23 Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

4AK23 Description

4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching .

4AK23 Features

* Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112

📥 Download Datasheet

4AK23 Datasheet Preview — Preview of 4AK23 PDF

Datasheet Details

Part number: 4AK23
Manufacturer: Hitachi Semiconductor
File Size: 40.08 KB
Datasheet: 4AK23_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOS FET Array

📁 Related Datasheet

📌 All Tags

Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

Hitachi Semiconductor 4AK23-like datasheet

4AK20 - Silicon N-Channel Power MOS FET Array
4AK21 - Silicon N-Channel Power MOS FET Array
4AK22 - Silicon N-Channel Power MOS FET Array
4AK25 - Silicon N-Channel Power MOS FET Array
4AK26 - Silicon N-Channel Power MOS FET Array
4AK27 - Silicon N Channel MOS FET High Speed Power Switching