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PF01410A - MOS FET Power Amplifier Module for GSM Handy Phone

PF01410A Description

PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd.Edition November 1997 Application * For GSM.

PF01410A Features

* 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC vo

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Datasheet Details

Part number
PF01410A
Manufacturer
Hitachi Semiconductor
File Size
25.37 KB
Datasheet
PF01410A_HitachiSemiconductor.pdf
Description
MOS FET Power Amplifier Module for GSM Handy Phone

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MOS FET Power Amplifier Module for GSM Handy Phone Hitachi Semiconductor
Hitachi Semiconductor PF01410A-like datasheet

PF01410A Stock/Price