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PF01412A - MOS FET Power Amplifier Module for E-GSM Handy Phone

Hitachi Semiconductor

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Datasheet Details

Part number: PF01412A
Manufacturer: Hitachi Semiconductor
File Size: 25.87 KB
Datasheet: PF01412A_HitachiSemiconductor.pdf
Description: MOS FET Power Amplifier Module for E-GSM Handy Phone

PF01412A Product details

Features

High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement.
RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10.

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MOS FET Power Amplifier Module for E-GSM Handy Phone Hitachi Semiconductor

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PF01412A Stock/Price