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PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Hitachi Semiconductor

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Datasheet Details

Part number: PF08103A
Manufacturer: Hitachi Semiconductor
File Size: 42.40 KB
Datasheet: PF08103A_HitachiSemiconductor.pdf
Description: MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

PF08103A Product details

Features

1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Con.

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MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Hitachi Semiconductor

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PF08103A Stock/Price