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PF08103B - MOS FET Power Amplifier

Hitachi Semiconductor

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Datasheet Details

Part number: PF08103B
Manufacturer: Hitachi Semiconductor
File Size: 34.51 KB
Datasheet: PF08103B_HitachiSemiconductor.pdf
Description: MOS FET Power Amplifier

PF08103B Product details

Features

1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800 PF08103B Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL V.

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MOS FET Power Amplifier Hitachi Semiconductor

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PF08103B Stock/Price