BT40N60BNF Datasheet, IGBT, Huajing Microelectronics

BT40N60BNF Features

• Igbt l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 40A and TC = 25°C l Extremely enhanced avalanche capability Applications

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BT40N60BNF

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon fs planar igbt. Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching perfo

BT40N60BNF Application

• Applications Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter

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BT40N60BNF

Huajing Microelectronics

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