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BT40N60BNF - Silicon FS Planar IGBT

Datasheet Summary

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 40A and TC = 25°C l Extremely enhanced avalanche capability.

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Datasheet Details

Part number BT40N60BNF
Manufacturer Huajing Microelectronics
File Size 105.84 KB
Description Silicon FS Planar IGBT
Datasheet download datasheet BT40N60BNF Datasheet
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Full PDF Text Transcription

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Silicon FS Planar IGBT BT40N60BNF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot （TC=25℃） VCE(SAT) 600 40 312 2.2 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
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