CS3410B3 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS3410B3, Silicon N-Channel Power MOSFET

CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

CS3410B3 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications： Circuit of switching DC/DC converters and DC motor control. Absolute（Tc= 25℃ unless otherwise specified