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CS3410B3 Datasheet - Huajing Microelectronics

CS3410B3 Silicon N-Channel Power MOSFET

CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .

CS3410B3 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications： Circuit of switching DC/DC converters and DC motor control. Absolute（Tc= 25℃ unless otherwise specified

CS3410B3-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS3410B3

Manufacturer:

Huajing Microelectronics

File Size:

246.97 KB

Description:

Silicon n-channel power mosfet.

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