CS3410B4 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS3410 B4 ○R General .
CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve s.

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Datasheet Specifications

Part number: CS3410B4
Manufacturer: Huajing Microelectronics
File Size: 243.58 KB
Datasheet: CS3410B4-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Circuit of switching DC/DC converters and DC motor control. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gat

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CS3410B4 Silicon N-Channel Power MOSFET Huajing Microelectronics

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