Datasheet4U Logo Datasheet4U.com

CS3410B4 - Silicon N-Channel Power MOSFET

CS3410B4 Description

Silicon N-Channel Power MOSFET CS3410 B4 ○R General .
CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve s.

CS3410B4 Applications

* Circuit of switching DC/DC converters and DC motor control. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gat

📥 Download Datasheet

Preview of CS3410B4 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CS3410B4
Manufacturer
Huajing Microelectronics
File Size
243.58 KB
Datasheet
CS3410B4-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

📁 Related Datasheet

  • CS341202 - Fast Recovery Single Diode Modules 20 Amperes/600-1200 Volts (Powerex Power Semiconductors)
  • CS3400 - N-Channel Trench Power MOSFET (CASS)
  • CS3400A - N-Channel Trench Power MOSFET (CASS)
  • CS3401 - P-Channel Trench Power MOSFET (CASS)
  • CS3401A - P-Channel Trench Power MOSFET (CASS)
  • CS3404 - N-Channel Trench Power MOSFET (CASS)
  • CS340602 - Fast Recovery Single Diode Modules (Powerex)
  • CS3407 - P-Channel Trench Power MOSFET (CASS)

📌 All Tags

Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS3410B4-like datasheet