CS3410BR Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS3410BR, Silicon N-Channel Power MOSFET

CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

CS3410BR Features

* l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications： Circuit of switching DC/DC converters and DC motor control. Absolute（Tc= 25℃ unless otherwise specified）