CS38N30AN

The CS38N30AN is Silicon N-Channel Power MOSFET designed by Huajing Microelectronics.

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS38N30AN
Manufacturer	Huajing Microelectronics
File Size	369.63 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS38N30AN-HuajingMicroelectronics.pdf
Additional preview pages of the CS38N30AN datasheet.

Product details

Description

CS38N30 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-3PN, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.085Ω) l Low Gate Charge (Typical Data:123nC) l Low Reverse transfer capacitances(Typical:82pF) l 100% Single Pulse avalanche energy Test 300 38.5 290 0.045 V A W Ω.

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Published: Dec 6, 2016 |