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H57V1262GFR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Datasheet Summary

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage: VDD and VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms Operation temperature HY5V26F(L)F(P)-XX Series: 0 ~ 70oC HY5V26F(L)F(P)-X(I) Series: -40 ~ 85oC.

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Datasheet Details

Part number H57V1262GFR
Manufacturer Hynix Semiconductor
File Size 285.34 KB
Description 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet download datasheet H57V1262GFR Datasheet
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www.DataSheet4U.com 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Release Draft Date Jul. 2009 Aug. 2009 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 www.DataSheet4U.com Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series DESCRIPTION The Hynix H57V1262GFR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. H57V1262GFR series is organized as 4banks of 2,097,152 x 16.
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