H57V1262GFR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Hynix Semiconductor

Datasheet Details

Part number	H57V1262GFR
Manufacturer	Hynix Semiconductor
File Size	285.34 KB
Description	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet	H57V1262GFR_HynixSemiconductor.pdf

and is subject to change without notice.

Voltage: VDD and VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms Operation temperature HY5V26F(L)F(P)-XX Series: 0 ~ 70oC HY5V26F(L)F(P)-X(I) Series: -40 ~ 85oC.

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Published: Sep 23, 2010 |