H57V1262GTR Datasheet - Hynix Semiconductor

H57V1262GTR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 www.DataSheet4U.com Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series H57V1262GTRDESCRIPTION The Hynix H.

H57V1262GTR Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

H57V1262GTR_HynixSemiconductor.pdf

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Datasheet Details

Part number:

H57V1262GTR

Manufacturer:

Hynix Semiconductor

File Size:

235.78 KB

Description:

128mb synchronous dram based on 2m x 4bank x16 i/o.

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H57V1262GTR H57V1262GTR 128Mb Synchronous DRAM based 4Bank x16 Hynix Semiconductor

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