Datasheet4U Logo Datasheet4U.com

H57V1262GTR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Datasheet Summary

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms - Commercial Temperature (0oC to 70oC) - Industrial Temperature (-40oC to 85oC) Operating Temperature.

📥 Download Datasheet

Datasheet preview – H57V1262GTR

Datasheet Details

Part number H57V1262GTR
Manufacturer Hynix Semiconductor
File Size 235.78 KB
Description 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Datasheet download datasheet H57V1262GTR Datasheet
Additional preview pages of the H57V1262GTR datasheet.

📁 Similar Datasheet

  • H5773 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-01 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-02 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-03 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-04 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-06 - Photosensor Modules (Hamamatsu Corporation)
  • H5773-20 - Photosensor Modules (Hamamatsu Corporation)
  • H5773P-01 - Photosensor Modules (Hamamatsu Corporation)
  • H5773P-02 - Photosensor Modules (Hamamatsu Corporation)
  • H5773P-03 - Photosensor Modules (Hamamatsu Corporation)
Other Datasheets by Hynix Semiconductor
  • H57V1262GFR - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
  • H57V2562GFR - 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
  • H57V2562GTR - 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
  • H57V2582GTR - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
  • H57V2582GTR-60C - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
  • H57V2582GTR-60I - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
  • H57V2582GTR-60J - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
  • H57V2582GTR-60L - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Initial Draft Release History Draft Date Jul. 2009 Aug. 2009 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 www.DataSheet4U.com Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GTR Series H57V1262GTRDESCRIPTION The Hynix H57V1262GTR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.
Published: |