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HY5DU121622CTP 512 Mb GDDR SDRAM

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Description

HY5DU121622CTP 512Mb(32Mx16) GDDR SDRAM HY5DU121622CTP This document is a general product .
and is subject to change without notice.

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Features

* VDD, VDDQ = 2.5V +/- 0.1V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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