HY5DU28822AT (HY5DU28xxxAT) 3rd 128M DDR SDRAM

Hynix Semiconductor

HY5DU28822AT Description

HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T 3rd 128M DDR SDRAM HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T This document is a general prod.
and is subject to change without notice.

HY5DU28822AT Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe

HY5DU28822AT Applications

* which requires large memory density and high bandwidth. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data stro

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Datasheet Details

Part number: HY5DU28822AT
Manufacturer: Hynix Semiconductor
File Size: 376.76 KB
Datasheet: HY5DU28822AT_HynixSemiconductor.pdf
Description: (HY5DU28xxxAT) 3rd 128M DDR SDRAM

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HY5DU281622LT-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
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HY5DU281622T-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

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HY5DU28xxxAT 3rd 128M DDR SDRAM Hynix Semiconductor

Hynix Semiconductor HY5DU28822AT-like datasheet

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