HY5S5B6ELF-HE_HynixSemiconductor.pdf
Datasheet Details
Part number:
HY5S5B6ELF-SE, HY5S5B6ELF-HE
Manufacturer:
Hynix Semiconductor
File Size:
241.92 KB
Description:
256mbit mobile sdr sdrams based on 4m x 4bank x16 i/o.
Note:
This datasheet PDF includes multiple part numbers: HY5S5B6ELF-SE, HY5S5B6ELF-HE.
Please refer to the document for exact specifications by model.
HY5S5B6ELF-SE, HY5S5B6ELF-HE, 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.0 / Jul.
2005 1 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series DESCRIPTION The Hynix Low Power SDRAM(Mobile SDR) is suited for non
HY5S5B6ELF-SE Features
* Standard SDRAM Protocol
* Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O pow
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