HY5S5B6ELF-SE Datasheet, I/o, Hynix Semiconductor

HY5S5B6ELF-SE Features

  • I/o Standard SDRAM Protocol
  • Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank opera

PDF File Details

Part number:

HY5S5B6ELF-SE

Manufacturer:

Hynix Semiconductor

File Size:

241.92kb

Download:

📄 Datasheet

Description:

256mbit mobile sdr sdrams based on 4m x 4bank x16 i/o. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

Datasheet Preview: HY5S5B6ELF-SE 📥 Download PDF (241.92kb)
Page 2 of HY5S5B6ELF-SE Page 3 of HY5S5B6ELF-SE

TAGS

HY5S5B6ELF-SE
256MBit
MOBILE
SDR
SDRAMs
based
4Bank
x16
Hynix Semiconductor

📁 Related Datasheet

HY5S5B6ELF-HE - 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.

HY5S5B6ELFP-HE - 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.

HY5S5B6ELFP-SE - 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 1.

HY5S5B6GLF-6 - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-6E - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-H - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-HE - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-S - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-SE - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-6 - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts