Datasheet4U Logo Datasheet4U.com

HY5S5B6ELFP-HE, HY5S5B6ELF-HE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

HY5S5B6ELFP-HE Description

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No.0.1 0.2 0.3 1.
and is subject to change without notice.

HY5S5B6ELFP-HE Features

* Standard SDRAM Protocol
* Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O pow

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HY5S5B6ELFP-HE, HY5S5B6ELF-HE. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HY5S5B6ELFP-HE, HY5S5B6ELF-HE
Manufacturer
Hynix Semiconductor
File Size
241.92 KB
Datasheet
HY5S5B6ELF-HE_HynixSemiconductor.pdf
Description
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Note
This datasheet PDF includes multiple part numbers: HY5S5B6ELFP-HE, HY5S5B6ELF-HE.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HY5-P - Current Transducers HY 5 to 25-P (LEM)
  • HY50-P - Current Transducer HY 50-P (LEM)
  • HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
  • HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)

📌 All Tags

256MBit MOBILE SDR SDRAMs based 4Bank x16 Hynix Semiconductor
Hynix Semiconductor HY5S5B6ELFP-HE-like datasheet