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HY5S5B6ELFP-HE, HY5S5B6ELF-HE Datasheet - Hynix Semiconductor

HY5S5B6ELFP-HE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jul. 2005 1 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series DESCRIPTION The Hynix Low Power SDRAM(Mobile SDR) is suited for non.

HY5S5B6ELFP-HE Features

* Standard SDRAM Protocol

* Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O pow

HY5S5B6ELF-HE_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY5S5B6ELFP-HE, HY5S5B6ELF-HE. Please refer to the document for exact specifications by model.
HY5S5B6ELFP-HE Datasheet Preview Page 2 HY5S5B6ELFP-HE Datasheet Preview Page 3

Datasheet Details

Part number:

HY5S5B6ELFP-HE, HY5S5B6ELF-HE

Manufacturer:

Hynix Semiconductor

File Size:

241.92 KB

Description:

256mbit mobile sdr sdrams based on 4m x 4bank x16 i/o.

Note:

This datasheet PDF includes multiple part numbers: HY5S5B6ELFP-HE, HY5S5B6ELF-HE.
Please refer to the document for exact specifications by model.

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HY5S5B6ELFP-HE HY5S5B6ELF-HE 256MBit MOBILE SDR SDRAMs based 4Bank x16 Hynix Semiconductor

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