HY5S6B6D (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM

Hynix Semiconductor

Description

Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History w w w Revision No.0.1 0.2 0.3 Initial Draft .D at h S a t e e 4U ..
and is subject to change without notice.

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Datasheet Specifications

Part number: HY5S6B6D
Manufacturer: Hynix Semiconductor
File Size: 386.10 KB
Datasheet: HY5S6B6D_HynixSemiconductor.pdf
Description: (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM

Features

* Standard SDRAM Protocol Internal 4bank operation
* Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Streng

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HY5S6B6D HY5S6B6D 4Banks 16-Bits SDRAM Hynix Semiconductor

Hynix Semiconductor HY5S6B6D-like datasheet