HY5S6B6D_HynixSemiconductor.pdf
Datasheet Details
Part number:
HY5S6B6x, HY5S6B6D
Manufacturer:
Hynix Semiconductor
File Size:
386.10 KB
Description:
(hy5s6b6d/l/s/f/p) 4banks x 1m x 16-bits sdram.
Note:
This datasheet PDF includes multiple part numbers: HY5S6B6x, HY5S6B6D.
Please refer to the document for exact specifications by model.
HY5S6B6x, HY5S6B6D, (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 0.3 / July 2004 1 w w w .D at h S a t e e 4U .
m o c HY5S6B6D(L/S)F(P)-xE 4Banks x1M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Pow
Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History w w w Revision No.
0.1 0.2 0.3 Initial Draft .D at h S a t e e 4U .
m o c HY5S6B6D(L/S)F(P)-xE 4Banks x1M x 16bits Synchronous DRAM History Draft Date Sep.
2003 Oct.
2003 Nov.
2003 July 2004 Remark Preliminary Preliminary Append Super-Low Power Group to the Data-sheet Changed DC Characteristics Changed Package Information w w w .D t a S a e h t e U 4 .c m o This document is a general product descri
HY5S6B6x Features
* Standard SDRAM Protocol Internal 4bank operation
* Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Streng
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