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HY5S6B6x, HY5S6B6D (HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM

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Description

Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History w w w Revision No.0.1 0.2 0.3 Initial Draft .D at h S a t e e 4U ..
and is subject to change without notice.

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This datasheet PDF includes multiple part numbers: HY5S6B6x, HY5S6B6D. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HY5S6B6x, HY5S6B6D
Manufacturer
Hynix Semiconductor
File Size
386.10 KB
Datasheet
HY5S6B6D_HynixSemiconductor.pdf
Description
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
Note
This datasheet PDF includes multiple part numbers: HY5S6B6x, HY5S6B6D.
Please refer to the document for exact specifications by model.

Features

* Standard SDRAM Protocol Internal 4bank operation
* Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Streng

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Hynix Semiconductor HY5S6B6x-like datasheet