Datasheet Specifications
- Part number
- HY5S7B6ALFP-6
- Manufacturer
- Hynix Semiconductor
- File Size
- 656.38 KB
- Datasheet
- HY5S7B6ALFP-6_HynixSemiconductor.pdf
- Description
- 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
Description
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Document Title 4Bank x 8M x 16bits Synchronous DRAM Revision History Revision No.0.1 0.2 1.0 1..Features
* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or WriteApplications
* which requires large memory density and high bandwidth. It is organized as 4banks of 8,388,608x16. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output dataHY5S7B6ALFP-6 Distributors
📁 Related Datasheet
📌 All Tags