HY5S7B6LF-H Datasheet (Hynix Semiconductor) - 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

HY5S7B6LF-H, 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

and Figures Final Version History Draft Date Oct.

2004 May.

2005 Aug.

2006 Aug.

2006 Jan.

2007 Remark Preliminary Preliminary Preliminary Preliminary www.DataSheet4U.com This document is a general product description and is subject to change without notice.

Hynix does not assume any responsibility

HY5S7B6LF-H Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst