H57V2622GMR - 256Mb Dual Die Synchronous DRAM

Hynix Semiconductor

Datasheet Details

Part number	H57V2622GMR
Manufacturer	Hynix Semiconductor
File Size	394.20 KB
Description	256Mb Dual Die Synchronous DRAM
Datasheet	H57V2622GMR_HynixSemiconductor.pdf

and is subject to change without notice.

Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp. : 0oC ~ 70oC, Industrial Temp. : -40oC ~ 85oC.
This product is in compliance with the directive pertaining of RoHS.

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Published: Sep 23, 2010 |