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HY57V281620FTP Synchronous DRAM Memory 128Mbit (8Mx16bit)

HY57V281620FTP Description

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.0.1 1.0 1.1 Init.
and is subject to change without notice.

HY57V281620FTP Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY57V281620FTP Applications

* which require wide data I/O and high bandwidth. HY57V281620F(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620F(L/S)TP is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock inp

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Datasheet Details

Part number
HY57V281620FTP
Manufacturer
Hynix Semiconductor
File Size
773.35 KB
Datasheet
HY57V281620FTP_HynixSemiconductor.pdf
Description
Synchronous DRAM Memory 128Mbit (8Mx16bit)

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Synchronous DRAM Memory 128Mbit 8Mx16bit Hynix Semiconductor
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