HY5DU12822AT 512Mb DDR SDRAM

Hynix Semiconductor

HY5DU12822AT Description

www.DataSheet4U.com HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T 512Mb DDR SDRAM HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T This document.
and is subject to change without notice.

HY5DU12822AT Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

HY5DU12822AT Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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Datasheet Details

Part number: HY5DU12822AT
Manufacturer: Hynix Semiconductor
File Size: 427.98 KB
Datasheet: HY5DU12822AT_HynixSemiconductor.pdf
Description: 512Mb DDR SDRAM

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HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
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512Mb DDR SDRAM Hynix Semiconductor

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