HY5DU12822DLTP, HY5DU121622DTP 512Mb DDR SDRAM

Hynix Semiconductor

HY5DU12822DLTP Description

512Mb DDR SDRAM HY5DU12822D(L)TP HY5DU121622D(L)TP This document is a general product .
and is subject to change without notice.

HY5DU12822DLTP Features

* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operati

HY5DU12822DLTP Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

📥 Download Datasheet

HY5DU12822DLTP Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5DU12822DLTP, HY5DU121622DTP. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY5DU12822DLTP, HY5DU121622DTP
Manufacturer: Hynix Semiconductor
File Size: 271.52 KB
Datasheet: HY5DU121622DTP_HynixSemiconductor.pdf
Description: 512Mb DDR SDRAM
Note: This datasheet PDF includes multiple part numbers: HY5DU12822DLTP, HY5DU121622DTP.
Please refer to the document for exact specifications by model.

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512Mb DDR SDRAM Hynix Semiconductor

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