HY5DU281622AT-6 128M(8Mx16) DDR SDRAM

Hynix Semiconductor

HY5DU281622AT-6 Description

HY5DU281622AT-6 128M(8Mx16) DDR SDRAM HY5DU281622AT This document is a general product .
and is subject to change without notice.

HY5DU281622AT-6 Features

* VDD, VDDQ = 2.5V +/- 5% All inputs and outputs are compatible with SSTL_2 interface JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface

HY5DU281622AT-6 Applications

* which requires high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks

📥 Download Datasheet

HY5DU281622AT-6 Datasheet Preview — Preview of HY5DU281622AT-6 PDF

Datasheet Details

Part number: HY5DU281622AT-6
Manufacturer: Hynix Semiconductor
File Size: 269.38 KB
Datasheet: HY5DU281622AT-6-HynixSemiconductor.pdf
Description: 128M(8Mx16) DDR SDRAM

📁 Related Datasheet

HY5DU281622 - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622FTP - 128Mb DDR SDRAM (Hynix)
HY5DU281622LT-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622LT-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622LT-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-H - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-K - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)
HY5DU281622T-L - 4 Banks x 2M x 16Bit Double Data Rate SDRAM (Hyundai)

📌 All Tags

128M8Mx16 DDR SDRAM Hynix Semiconductor

Hynix Semiconductor HY5DU281622AT-6-like datasheet

HY5DU281622AT - (HY5DU28xxxAT) 3rd 128M DDR SDRAM
HY5DU281622DT - (HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM
HY5DU281622ET - 128M(8Mx16) GDDR SDRAM
HY5DU281622LT - (HY5DU28xxxAT) 3rd 128M DDR SDRAM
HY5DU281622T - 2nd 128M DDR SDRAM
HY5DU283222AF - 128M(4Mx32) GDDR SDRAM