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HY5DU56822T (HY5DU56xxx(L)T) 2nd 256M DDR SDRAM

HY5DU56822T Description

m o .c U 4 t e e h S a at .D w w w HY5DU56422(L)T HY5DU56822(L)T HY5DU561622(L)T m 2nd 256M DDR SDRAM o .c U 4 t e e h S a t a .D w w w HY5DU56422(L.
and is subject to change without notice.

HY5DU56822T Features

* VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional da

HY5DU56822T Applications

* which requires large memory density and high bandwidth. The Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data stro

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Datasheet Details

Part number
HY5DU56822T
Manufacturer
Hynix Semiconductor
File Size
370.15 KB
Datasheet
HY5DU56822T_HynixSemiconductor.pdf
Description
(HY5DU56xxx(L)T) 2nd 256M DDR SDRAM

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