Datasheet4U Logo Datasheet4U.com

F2270 Voltage Variable Attenuator

F2270 Description

75Ω Voltage Variable Attenuator 5MHz to 3000MHz F2270 Datasheet .
The F2270 is a 75Ω, low insertion loss voltage variable RF attenuator (VVA) designed for a multitude of wireless and other RF applications.

F2270 Features

* include a VMODE pin allowing either a positive or negative voltage control slope versus attenuation and multi-directional operation where the RF input can be applied to either the RF1 or RF2 pins. The attenuation control voltage range is from 0V to 5V using either a 3.3V or 5V power supply. Competit

📥 Download Datasheet

Preview of F2270 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
F2270
Manufacturer
IDT
File Size
4.59 MB
Datasheet
F2270-IDT.pdf
Description
Voltage Variable Attenuator

📁 Related Datasheet

  • F2201 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2202 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2211 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2212 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2213 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2246 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2247 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2248 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

📌 All Tags

IDT F2270-like datasheet