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2N6933 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number
2N6933
Manufacturer
INCHANGE
File Size
194.87 KB
Datasheet
2N6933-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for off-line power supplies,switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 8 V IC Collector Current-Co

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