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2SB1063 PNP Transistor

2SB1063 Description

isc Silicon PNP Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= -2. Good Linearity of hFE. Wide Area of Safe Operation. Complement to T.

2SB1063 Applications

* Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Col

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Datasheet Details

Part number
2SB1063
Manufacturer
INCHANGE
File Size
215.55 KB
Datasheet
2SB1063-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1063-like datasheet