2SB1185 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB1185 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min. Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2SB1185
Manufacturer: INCHANGE
File Size: 213.93 KB
Datasheet: 2SB1185-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A I

2SB1185 Distributors

📁 Related Datasheet

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2SB1185 PNP Transistor INCHANGE

INCHANGE 2SB1185-like datasheet