2SB1186 PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Good Linearity of hFE. Complement to Type 2SD1763. Minimum Lot-to-.

📥 Download Datasheet

2SB1186 Datasheet Preview — Preview of 2SB1186 PDF

Datasheet Specifications

Part number: 2SB1186
Manufacturer: INCHANGE
File Size: 197.56 KB
Datasheet: 2SB1186-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5

2SB1186 Distributors

📁 Related Datasheet

2SB1186A 2SB1180 2SB1180A 2SB1181 2SB1182 2SB1182-P

📌 All Tags

2SB1186 PNP Transistor INCHANGE

INCHANGE 2SB1186-like datasheet