2SB1186 Datasheet - INCHANGE

2SB1186, PNP Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)

Applications

* Power amplifier applications.

* Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5

2SB1186-INCHANGE.pdf