2SB1186 PNP Transistor

INCHANGE

2SB1186 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Good Linearity of hFE. Complement to Type 2SD1763. Minimum Lot-to-.

2SB1186 Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5

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Datasheet Details

Part number: 2SB1186
Manufacturer: INCHANGE
File Size: 197.56 KB
Datasheet: 2SB1186-INCHANGE.pdf
Description: PNP Transistor

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PNP Transistor INCHANGE

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