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2SB1105 - PNP Transistor

2SB1105 Description

isc Silicon PNP Darlington Power Transistor 2SB1105 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1. Complement to.

2SB1105 Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collecto

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Datasheet Details

Part number
2SB1105
Manufacturer
INCHANGE
File Size
209.08 KB
Datasheet
2SB1105-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1105-like datasheet