2SB1186A Datasheet - INCHANGE

2SB1186A, PNP Transistor

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min. Good Linearity of hFE. Complement to Type 2SD1763A. Minimum Lot-to.

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2SB1186A-INCHANGE.pdf

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Datasheet Details

Part number:

2SB1186A

Manufacturer:

INCHANGE

File Size:

212.66 KB

Description:

PNP Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5

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2SB1186A PNP Transistor INCHANGE

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