2SB1186A PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min. Good Linearity of hFE. Complement to Type 2SD1763A. Minimum Lot-to.

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Datasheet Specifications

Part number: 2SB1186A
Manufacturer: INCHANGE
File Size: 212.66 KB
Datasheet: 2SB1186A-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5

2SB1186A Distributors

📁 Related Datasheet

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2SB1186A PNP Transistor INCHANGE

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