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2SB1431 PNP Transistor

2SB1431 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A). Low Collector S.

2SB1431 Applications

* Designed for low-frequency power amplifiers and low- speed switching applications. 2SB1431 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current

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Datasheet Details

Part number
2SB1431
Manufacturer
INCHANGE
File Size
232.58 KB
Datasheet
2SB1431-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1431-like datasheet