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2SB632 PNP Transistor

2SB632 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 .
High Collector Current-IC=-2. High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min). Good Linearity of hFE. Complement to.

2SB632 Applications

* Low-frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse

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Datasheet Details

Part number
2SB632
Manufacturer
INCHANGE
File Size
184.02 KB
Datasheet
2SB632-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB632-like datasheet