2SB632 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB632 .
High Collector Current-IC=-2. High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min). Good Linearity of hFE. Complement to.

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Datasheet Specifications

Part number: 2SB632
Manufacturer: INCHANGE
File Size: 184.02 KB
Datasheet: 2SB632-INCHANGE.pdf
Description: PNP Transistor

Applications

* Low-frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse

2SB632 Distributors

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2SB632 PNP Transistor INCHANGE

INCHANGE 2SB632-like datasheet