2SB638 PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE =1000 (Min) @ IC = -5A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

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Datasheet Specifications

Part number: 2SB638
Manufacturer: INCHANGE
File Size: 180.11 KB
Datasheet: 2SB638-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Coll

2SB638 Distributors

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2SB638 PNP Transistor INCHANGE

INCHANGE 2SB638-like datasheet