* High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E
2SB632
Sanyo Semicon Device
363.58 KB
Pnp/npn epitaxial planar silicon transistor.
Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Fe.
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