2SB634 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust device perf.

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Datasheet Specifications

Part number: 2SB634
Manufacturer: INCHANGE
File Size: 208.54 KB
Datasheet: 2SB634-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector

2SB634 Distributors

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2SB634 PNP Transistor INCHANGE

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