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2SB634 - PNP Transistor

2SB634 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation. Minimum Lot-to-Lot variations for robust device perf.

2SB634 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector

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Datasheet Details

Part number
2SB634
Manufacturer
INCHANGE
File Size
208.54 KB
Datasheet
2SB634-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB634-like datasheet