2SB630 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB630 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). Complement to Type 2SD610. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SB630
Manufacturer: INCHANGE
File Size: 219.56 KB
Datasheet: 2SB630-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Audio frequency power amplifier applications.
* Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Col

2SB630 Distributors

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2SB630 Silicon PNP Power Transistor INCHANGE

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